DE275X2-102N06A Datasheet, PDF (4/4 Pages) List of Unclassifed Manufacturers – RF Power MOSFET

DE275X2-102N06A
RF Power MOSFET
102N06A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3
MOSFET model. It includes the stray inductive terms L_G, L_S and L_D. Rd is the R_DS(ON) of the device, Rds
is the resistive leakage term. The output capacitance, C_OSS, and reverse transfer capacitance, C_RSS are
modeled with reversed biased diodes. This provides a varactor type response necessary for a high
power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
10 DRAIN
Ld
4
20 GATE
Lg
Doff
5
Rd
Roff
D1crs
D2crs
6
8
Ron
Don
7
M3
Dcos
Rds
2
Ls
30 SOURCE
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYS RF web site at
www.ixysrf.com
Net List:
*SYM=POWMOSN
.SUBCKT 102N06A 10 20 30
* TERMINALS: D G S
* 1000 Volt 6 Amp 1.6 Ohm N-Channel Power MOSFET
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .5
DON 6 2 D1
ROF 5 7 1.0
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 1.9N
RD 4 1 1.6
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=2.3)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.2 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.6 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=400P BV=1000 M=.35 VJ=.6 TT=400N RS=10M)
.ENDS
Doc #9200-0224 Rev 6
© 2006 IXYS RF
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: [phone]
Email: [e-mail]
Web: http://www.directedenergy.com