DE275X2-102N06A Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – RF Power MOSFET

DE275X2-102N06A
♦ Common Source Push-Pull Pair
♦ N-Channel Enhancement Mode
♦ Low Q_g and R_g
♦ High dv/dt
♦ Nanosecond Switching
RF Power MOSFET
V_DSS
I_D25
= 1000 V
= 16 A
The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a
common source configuration. The device is optimized for push-pull or paral-
lel operation in RF generators and amplifiers at frequencies to >65 MHz.
R_DS(on) = _{0.8 Ω}
P_DC
= 1180 W
Unless noted, specifications are for each output device
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_DC ⁽¹⁾
P_DHS ⁽¹⁾
P_DAMB ⁽¹⁾
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
R_thJC ⁽¹⁾
R_thJHS ⁽¹⁾
T_J
T_JM
T_stg
T_L
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
1000 V
1000 V
Continuous
Transient
±20 V
±30 V
T_c = 25°C
T_c = 25°C, pulse width limited by T_JM
16 A
48 A
DRAIN 1
DRAIN 2
T_c = 25°C
T_c = 25°C
6
A _{GATE 1}
20 mJ
GATE 2
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
T_c = 25°C, Derate 5.0W/°C above 25°C
T_c = 25°C
5 V/ns
>200
1180
750
5.0
V/ns
W
W
W
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
min. typ. max.
V_GS = 0 V, I_D = 3 ma
1000
V
V_DS = V_GS, I_D = 4 ma
2.5
5.5 V
V_GS = ±20 V_DC, V_DS = 0
±100 nA
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
50 µA
1 mA
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
1.6 Ω
V_DS = 15 V, I_D = 0.5I_D25, pulse test
2
7.5
S
0.25
C/W
0.50
C/W
-55
+175 °C
175
°C
-55
+175 °C
S_SG_o1_urceS₁D1
S_SD_o2_urceS₂G2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• High Performance Push-Pull RF
Package
• Optimized for RF and high speed
switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density
Note: All specifications are per each
transistor, unless otherwise noted.
(1) _{Thermal specifications are for the}
package, not per transistor
1.6mm (0.063 in) from case for 10 s
300
°C
4
g