10N60C5M Datasheet, PDF (4/4 Pages) IXYS Corporation – CoolMOS Power MOSFET

Advanced Technical Information
IXKP 10N60C5M
1.6
V_DS =
5V
5.5 V
T_JV = 150°C
1.2
6 V ^{6.5 V}
7V
20 V
1.2
I_D = 5.2 A
V_GS = 10 V
1
0.8
0.8
0.6
98 %
0.4
typ
0.4
0.2
0
0
5
10
15
20
I _D [A]
Fig. 3 Typ. drain-source on-state
resistance characteristics of IGBT
0
-60
-20
20
60
100 140 180
T _j [°C]
Fig. 4 Drain-source on-state resistance
10 ²
10
I_D = 5.2 A pulsed
9
8
10 ¹
T_J = 150 °C
25 °C
150 °C, 98%
7
6
V_DS =120 V
400 V
5
4
10 ⁰
3
25 °C, 98%
2
10 ^-1
0
0.5
1
1.5
2
V _SD [V]
Fig. 6 Forward characteristic
of reverse diode
1
0
0
5
10
15
20
Q _gate [nC]
Fig. 7 Typ. gate charge
250
I_D = 3.4 A
700
I_D = 0.25 mA
200
660
40
V_DS > 2·R_{DS(on) max} · I_D
36
32
25 °C
28
24
20
150 °C
16
T_J =
12
8
4
0
0
2
4
6
8
10
V _GS [V]
Fig. 5 Typ. transfer characteristics
10 ⁵
V_GS = 0 V
f = 1 MHz
10 ⁴
10 ³
Ciss
10 ²
Coss
10 ¹
Crss
10 ⁰
0
50
100
150
200
V _DS [V]
Fig. 8 Typ. capacitances
150
620
100
580
50
0
20
60
100
140
T _j [°C]
Fig. 9 Avalanche energy
540
180
-60
-20
20
60
100 140 180
T _j [°C]
Fig. 10 Drain-source breakdown voltage
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