 English |
|
|
|
|
|
|
|
| 10N60C5M Datasheet, PDF (1/4 Pages) IXYS Corporation – CoolMOS Power MOSFET | |||
| |||
|
Advanced Technical Information
IXKP 10N60C5M
CoolMOS Power MOSFET
Fully isolated package
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
ID25
= 5.4 A
VDSS
= 600 V
RDS(on) max = 0.385 Ω
D
G
S
TO-220 ABFP
G
D
S
MOSFET
Symbol
VDSS
VGS
ID25
ID90
EAS
EAR
dV/dt
Conditions
TVJ = 25°C
TC = 25°C
TC = 90°C
single pulse
repetitive
ID = 3.4 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20
V
5.4 A
3.7 A
225 mJ
0.3 mJ
50 V/ns
Symbol
RDSon
VGS(th)
IDSS
IGSS
Ciss
Coss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise speciï¬ed)
min. typ. max.
VGS = 10 V; ID = 5.2 A
VDS = VGS; ID = 0.34 mA
VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
VGS = 0 V; VDS = 100 V
f = 1 MHz
TVJ = 25°C
TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A
VGS = 10 V; VDS = 400 V
ID = 5.2 A; RG = 4.3 Ω
350 385 mΩ
2.5
3 3.5
V
1 µA
tbd
µA
100 nA
790
pF
38
pF
17 22 nC
4
nC
6
nC
tbd
ns
tbd
ns
tbd
ns
tbd
ns
3.95 K/W
Features
⢠Fast CoolMOS power MOSFET - 4th
generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
⢠Fully isolated package
Applications
⢠Switched mode power supplies (SMPS)
⢠Uninterruptible power supplies (UPS)
⢠Power factor correction (PFC)
⢠Welding
⢠Inductive heating
⢠PDP and LCD adapter
CoolMOS is a trademark of
Inï¬neon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1-4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese