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MIXD80PM650TMI Datasheet, PDF (3/5 Pages) IXYS Corporation – IGBT Modules
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MIXD80PM650TMI
IGBTs T2 / T3
Symbol
VCES
VGES
IC25
IC80
Ptot
VCE(sat)
Definitions
collector emitter voltage
max. DC gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
ICES
IGES
Cies
QG(on)
td(on)
tr
td(off)
tf
Eon
Eoff
Erec(off)
ICM
VCEK
tSC
(SCSOA)
RthJC
RthCH
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse recovery losses at turn-off
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
continuous
IC = 100 A; VGE = 15 V
IC = 1.6 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ±20 V
VCE = 25 V; VGE = 0 V; f = 1 MHz
VGE = 0...15 V
TVJ = 25°C
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 25°C
inductive load
VCE = 300 V; IC = 100 A
VGE = ±15 V; RG = 8.2 W
TVJ = 150°C
RBSOA; VGE = ±15 V; RG = 8.2 W; L = 100 µH
clamped inductive load;
TVJ = 150°C
VCE = 360 V; VGE = ±15 V;
RG = 8.2 W; non-repetitive
TVJ = 150°C
(per IGBT)
(per IGBT)
min.
5.0
Ratings
typ. max. Unit
650 V
±20 V
147 A
110 A
375 W
1.5 1.7 V
1.75
V
5.8 6.5 V
20 250 µA
500 nA
tbd
nF
180
nC
25
ns
45
ns
120
ns
40
ns
2
mJ
2.4
mJ
tbd
mJ
200 A
VCES
V
10 µs
400
A
0.40 K/W
0.13
K/W
Diodes D5 / D6
Symbol Definitions
VRRM
IF25
IF80
max. repetitive reverse voltage
forward current
Symbol Conditions
Conditions
VF
IR
QRR
IRM
trr
Erec(off)
RthJC
RthCH
forward voltage
leakage current
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery losses at turn-off
thermal resistance junction to case
thermal resistance case to heatsink
IF = 100 A
VR = 650 V
VR = 300 V; IF = 100 A
diF /dt = -1500 A/µs
(per diode)
(per diode)
TC = 25°C
TC = 80°C
Maximum Ratings
650 V
114 A
83 A
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
Characteristic Values
min. typ. max.
1.7 2.0 V
1.8
V
20 200 µA
9.5
µC
95
A
150
ns
2.5
mJ
0.6 K/W
0.2
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2014 IXYS All rights reserved
20140129
3-5
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