MIXD80PM650TMI Datasheet, PDF (1/5 Pages) IXYS Corporation – IGBT Modules

IGBT Modules
Multi Level
XPT IGBT Technology
MIXD80PM650TMI
I = _C80 (T1/T4) 82 A
I_C80 (T2/T3) = 110 A
V_CES = 650 V
V = _{CE(sat) typ.} 1.5 V
Part name (Marking on product)
MIXD80PM650TMI
Th1
+
NTC
D1
T1
G1
E1
Th2
D5
D2
G2 ^T2
E2
N
U
D3
G3 ^T3
E3
D6
G4 ^T4
E4
D4
_
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 2x I_C
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low V_CE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
• Optimized for solar applications
- T2/T3 re-inforced
Application:
• AC motor control
• AC servo and robot drives
• UPS
• Solar
Package:
• Compatible to EASY2B package
• Pins for pressfit connection
• With DCB base
IXYS reserves the right to change limits, test conditions and dimensions.
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20140129
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