IXGX50N60AU1 Datasheet, PDF (3/6 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

IXGX50N60AU1
IXGX50N60AU1S
Fig. 1 Saturation Characteristics
80
T_J = 25°C
70
60
50
V_GE = 15V
13V
40
11V
9V
30
7V
5V
20
10
0
0
1
2
3
4
5
V_CE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9
T_J = 25°C
8
7
6
5
4
3
2
I_C = 40A
1
I_C = 20A
0
4 5 6 7 8 9 10 11 12 13 14 15
V_GE - Volts
Fig. 5 Input Admittance
80
V_CE = 100V
70
60
50
40
30
20
T_J = 25°C
10
T_J = 125°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GE - Volts
© 1997 IXYS All rights reserved
Fig. 2 Output Characterstics
350
V_GE = 15V ^13V
300
11V
250
9V
T_J = 25°C
200
150
7V
100
50
5V
0
0 2 4 6 8 10 12 14 16 18 20
V_CE - Volts
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
1.4
I_C = 80A
1.3
1.2
1.1
I_C = 40A
1.0
0.9
I_C = 20A
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T_J - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
V_GE(th) @ 250µA
1.1
1.0
0.9
BV_CES @ 3mA
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
T_J - Degrees C