IXGX50N60AU1 Datasheet, PDF (1/6 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

Preliminary data
HiPerFAST^TM
IGBT with Diode
Combi Pack
IXGX50N60AU1
IXGX50N60AU1S
V_CES
I
C25
V_CE(sat)
t_fi
= 600 V
= 75 A
= 2.7 V
= 275 ns
TO-247 Hole-less SMD
(50N60AU1S)
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I
C25
I_C90
I_CM
SSOA
(RBSOA)
P_C
T
J
T_JM
T_stg
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T
C
= 25°C, limited by leads
T_C = 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load, L = 30 µH
T_C = 25°C
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
50
A
200
A
I_CM = 100
A
@ 0.8 V_CES
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
6
g
300
°C
G
E
TO-247 Hole-less
(50N60AU1)
C (TAB)
G
C
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
l _{Hole-less TO-247 for clip mount}
l _{High current capability}
l _{High frequency IGBT and anti-}
parallel FRED in one package
l _{Low V}
CE(sat)
- for minimum on-state conduction
losses
l _{MOS Gate turn-on}
- drive simplicity
l _{Fast Recovery Epitaxial Diode (FRED)}
- soft recovery with low I_RM
Symbol
BV
CES
V_GE(th)
I_CES
I
GES
V_CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
500
µA,
V
GE
=
0
V
600
I_C = 500 µA, V_CE = V_GE
2.5
V_CE = 0.8 • V_CES
V =0V
GE
T_J = 25°C
T
J
=
125°C
V
CE
=
0
V,
V
GE
=
±20
V
I_C = I_C90, V_GE = 15 V
V
5.5 V
250 µA
15 mA
±100 nA
2.7 V
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switch-mode and resonant-mode}
power supplies
Advantages
l _{Space savings (two devices in one}
package)
l _{Reduces assembly time and cost}
l _{High power density}
© 1997 IXYS All rights reserved
97513 (5/97)