IXGH24N170AH1 Datasheet, PDF (3/4 Pages) IXYS Corporation – High Voltage IGBTs w/Diode

Fig. 1. Output Characteristics
@ 25ºC
48
44
V_GE = 15V
13V
40
11V
9V
36
32
28
7V
24
20
16
12
8
4
5V
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V_CE - Volts
Fig. 3. Output Characteristics
@ 125ºC
48
44
V_GE = 15V
13V
40
11V
9V
36
32
28
7V
24
20
16
12
8
5V
4
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
V_CE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
9.5
8.5
T_J = 25ºC
7.5
I _C = 48A
6.5
5.5
24A
4.5
3.5
12A
2.5
5
6
7
8
9
10
11
12
13
14
15
V_GE - Volts
IXGH24N170AH1
IXGT24N170AH1
180
160
140
120
100
80
60
40
20
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
V_GE = 15V
13V
11V
9V
7V
5V
5
10
15
20
25
30
V_CE - Volts
Fig. 4. Dependence of V_CE(sat) on
Junction Temperature
1.8
V_GE = 15V
1.6
1.4
I _C = 48A
1.2
1.0
I _C = 24A
0.8
I _C = 12A
0.6
0.4
-50
-25
0
25
50
75
100
125
150
T_J - Degrees Centigrade
Fig. 6. Input Admittance
60
55
50
45
40
35
T_J = 125ºC
30
25ºC
25
- 40ºC
20
15
10
5
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V_GE - Volts
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