IXGH24N170AH1 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage IGBTs w/Diode

High Voltage
IGBTs w/Diode
Preliminary Technical Information
IXGH24N170AH1
IXGT24N170AH1
V_CES =
I_C25 =
V_CE(sat) ≤
t_fi(typ) =
1700V
24A
6.0V
40ns
TO-247 (IXGH)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
t_SC
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
Maximum Ratings
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
1700
V
1700
V
± 20
V
± 30
V
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1ms
24
A
16
A
75
A
V_GE = 15V, T_VJ = 125°C, R_G = 10Ω
I_CM = 50
A
Clamped Inductive Load
0.8 • V_CES
V
T_J = 125°C, V_CE = 1200V, V_GE = 15V, R_G = 22Ω
10
μs
T_C = 25°C
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
°C
260
°C
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
TO-247
TO-268
6
g
4
g
Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = 0.8 • V_CES, V_GE = 0V
I_GES
V_CE(sat)
V_CE = 0V, V_GE = ± 20V
I_C = 16A, V_GE = 15V, Note 1
Characteristic Values
Min.
Typ. Max.
1700
V
3.0
5.0 V
T_J = 125°C
100 μA
1.5 mA
±100 nA
4.5
6.0 V
T_J = 125°C
4.8
V
G
CE
C (TAB)
TO-268 (IXGT)
G
E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Optimized for Low Conduction and}
Switching Losses
z _{Anti-Parallel Ultra Fast Diode}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Welding Machines}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99413A(05/09)