IXBH15N140 Datasheet, PDF (3/4 Pages) IXYS Corporation – High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

70
T_J = 25°C
60
50
40
V_GE = 17V
15V
13V
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20
V_CE - Volts
Fig. 1 Typ. Output Characteristics
60
V_CE = 20V
50
40
30
T_J = 125°C
T_J = 25°C
20
10
0
5 6 7 8 9 10 11 12 13
V_GE - Volts
Fig. 3 Typ. Transfer Characteristics
16
V_CE = 600V
14 I_C = 9A
12
10
8
6
4
2
0
0
10
20
30
40
50
Q_G - nanocoulombs
Fig. 5 Typ. Gate Charge characteristics
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IXBH 15N140
IXBH 15N160
70
T_J = 125°C
60
50
40
V_GE = 17V
15V
13V
30
20
10
0
0 2 4 6 8 10 12 14 16 18 20 22
V_CE - Volts
Fig. 2 Typ. Output Characteristics
30
25
20
15
10
5
T_J = 125°C
0
T_J = 25°C
0
1
2
3
4
5
6
V_F - Volts
Fig. 4 Typ. Characteristics of Reverse
Conduction
100
10
T_J = 125°C
V_CEK < V_CES
1
IXBH 15N140
IXBH 15N160
0.1
0
400
800
1200
1600
V_CE - Volts
Fig. 6 Reverse Biased Safe Operating Area
RBSOA
3-4