IXBH15N140 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

High Voltage BIMOSFET^TM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBH 15N140
IXBH 15N160
V_CES = 1400/1600 V
I_C25 = 15 A
V_CE(sat) = 5.8 V typ.
t_fi
= 40 ns
C _{TO-247 AD}
G
G
C
E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I
C90
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
M
d
Weight
Conditions
Maximum Ratings
15N140 15N160
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
1400
1400
1600 V
1600 V
±20
V
±30
V
T_C = 25°C,
T
C
= 90°C
T_C = 25°C, 1 ms
15
A
9
A
18
A
V_GE = 15 V, T_VJ = 125°C, R_G = 47 W V_CE = 0.8•V_CES I_CM = 18
A
Clamped inductive load, L = 100 mH
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
Mounting torque
1.15/10 Nm/lb.in.
6
g
Features
• International standard package
JEDEC TO-247 AD
• High Voltage BIMOSFET^TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R_DS(on)
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• MOS Gate turn-on
- drive simplicity
• Reverse conducting capability
Applications
• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• CRT deflection
• Lamp ballasts
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V
CE(sat)
Conditions
I_C = 1 mA, V_GE = 0 V
I_C = 1 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I = I , V = 15 V
C
C90 GE
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
15N140
15N160
1400
1600
4
V
V
8V
T_J = 25°C
T_J = 125°C
100 mA
0.1
mA
± 500 nA
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
T_J = 125°C
5.8 7.0 V
7.7
V
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