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FMP26-02P Datasheet, PDF (3/4 Pages) IXYS Corporation – Polar P & N-Channel Power MOSFET Common Drain Topology
◁
N - CHANNEL
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
Maximum Ratings
200
V
200
V
± 20
V
± 30
V
26
A
120
A
50
A
1
J
125
W
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ±20 V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, (Note 1)
gfs
Ciss
Coss
Crss
VDS = 10V, ID = 25A, (Note 1)
VGS = 0V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 z VDSS, ID = 25A
RG = 10Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 z VDSS, ID = 25A
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
200
V
2.5
5.0 V
± 100 nA
25 μA
250 μA
60 mΩ
12
23
S
2720
pF
490
pF
105
pF
26
ns
35
ns
70
ns
30
ns
70
nC
17
nC
37
nC
1.0 °C/W
0.15
°C/W
© 2008 IXYS CORPORATION, All rights reserved
FMP26-02P
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