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| FMP26-02P Datasheet, PDF (2/4 Pages) IXYS Corporation – Polar P & N-Channel Power MOSFET Common Drain Topology | |||
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Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250μA
Characteristic Values
Min. Typ. Max.
- 200
V
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
VDS = VGS, ID = - 250μA
VGS = ±20 V, VDS = 0V
VDS = VDSS, VGS = 0V
TJ = 125°C
VGS = -10V, ID = -13A, Note 1
VDS = -10V, ID = -13A, Note 1
- 2.5
10
VGS = 0V, VDS = - 25 V, f = 1 MHz
Resistive Switching Times
VGS = -10V, VDS = 0.5 z VDSS, ID = -13A
RG = 3.3Ω (External)
VGS= -10V, VDS = 0.5 z VDSS, ID = -13A
17
2740
540
100
18
33
46
21
56
18
20
0.15
- 4.5 V
± 100 nA
-10 μA
- 150 μA
170 mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.0 °C/W
°C/W
FMP26-02P
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
Drain-Source Diode
Symbol
Test Conditions2
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
- 17
A
ISM
Repetitive, pulse width limited by TJM
-104
A
VSD
IF = -13A, VGS = 0 V, Note 1
- 3.2
V
trr
IF = -13A, di/dt = 100 A/μs
QRM
VR = -100V, VGS = 0V
IRM
240
ns
2.2
μC
-18
A
ÎÎΨΣ ÏεÏεÏÏÎµÏ Ïηε ÏÎ¹Î³Î·Ï Ïο Ïηανγε λιμιÏÏ, ÏεÏÏ ÏονδιÏιονÏ, ανδ διμενÏιονÏ.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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