DEIC421 Datasheet, PDF (3/8 Pages) IXYS Corporation – RF MOSFET DRIVER

DEIC421
RF MOSFET DRIVER
Lead Description
SYMBOL
VCC
IN
IN GND
OUT
GND
FUNCTION
Supply Voltage
Input
Input Ground
Output
Power Ground
DESCRIPTION
Positive power-supply voltage input. These leads provide power to the entire
chip. The range for this voltage is 8V to 30V.
Input signal. TTL and CMOS compatible. 5V to 8V optimum.
Input ground Kelvin connection.
Driver output. For application purposes, this lead is connected directly to the
gate of a MOSFET.
Power grounds should be connected to a low noise analog ground plane for
optimum performance.
Note: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do
not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Figure 2 - Characteristics Test Diagram
+
10uF
Vcc
Vcc
GND
Choke _IN
C_L
IN GND
OUT
Vcc
GND
Figure 3 - Timing Diagram
5V
90%
INPUT 2.5V
10%
0V
Vcc
90%
OUTPUT
10%
0V
tONDLY
PWMIN
tR
tOFFDLY
tF