DEIC421 Datasheet, PDF (2/8 Pages) IXYS Corporation – RF MOSFET DRIVER

Absolute Maximum Ratings
DEIC421
RF MOSFET DRIVER
Parameter
Value
Parameter
Value
Supply Voltage
30V
Storage Temperature
65°C to 150°C
Input Pin
All Other Pins
Power Dissipation
TAMBIENT ≤ 25°C
TCASE ≤ 25°C
-5V to V_CC+0.3V
-0.3V to V_CC+0.3V
2W
100W
Electrical Characteristics
Soldering Lead Temperature
(10 seconds maximum)
Maximum Junction Temperature
Operating Temperature Range
Thermal Impedance Rth_(JC)
(Junction to Case)
300°C
150°C
-40°C to 85°C
1.3°C/W
Unless otherwise noted, TA = 25 °C, 8V ≤ VCC ≤ 30V.
All voltage measurements with respect to DGND. DEIC421 configured as described in Test Conditions.
Symbol
Parameter
Test Conditions
Min
Typ Max
Units
V_IH
High input voltage
V_IL
Low input voltage
V_IN
Input voltage range
I_IN
Input current
0V ≤ V_IN ≤ V_CC
V_OH
High output voltage
V_OL
Low output voltage
R_OH
Output resistance @
output high
I_OUT = 10mA, V_CC = 15V
3.5
-5
-10
V_CC - .025
V
0.8
V
V_CC + 0.3
V
10
mA
V
0.025
V
0.4
0.6
Ω
R_OL
I_PEAK
I_DC
f_MAX
t_R
t_F
t_ONDLY
t_OFFDLY
P_Wmin
V_CC
Output resistance @
output low
Peak output current
Continuous output
current
Maximum frequency
Rise time⁽¹⁾
Fall time⁽¹⁾
On-time propagation
delay⁽¹⁾
Off-time propagation
delay⁽¹⁾
Minimum pulse width
Power supply voltage
I_CC
Power supply current
(1)_{Refer to Figures 2 and 3}
I_OUT = 10mA, V_CC = 15V
V_CC = 15V
C_L = 4nF, V_CC = 15V
C_L = 1nF, V_CC = 15V, V_OH = 2V to 12V
C_L = 4nF, V_CC = 15V, V_OH = 2V to 12V
C_L = 1nF, V_CC = 15V, V_OH = 12V to 2V
C_L = 4nF, V_CC = 15V, V_OH = 12V to 2V
C_L = 4nF, V_CC = 15V
0.4
0.6
20
4
45
3
4
3
3.5
32
38
Ω
A
A
MHz
ns
ns
ns
ns
ns
C_L = 4nF, V_CC = 15V
FWHM, C_L = 1nF, V_CC = 15V
+3V to +3V, C_L = 1nF, V_CC = 15V
V_IN = 3.5V
V_IN = 0V
V_IN = +V_CC
29
35
ns
8
ns
9
ns
8
15
30
V
1
3
mA
0
10
µA
10
µA
Specifications Subject To Change Without Notice