DE375-501N21A_09 Datasheet, PDF (3/5 Pages) IXYS Corporation – RF Power MOSFET

Fig. 1
90
75
60
45
Typical Transfer Characteristics
V_DS = 100V, PW = 40uS
Fig. 2
45
30
DE375-501N21A
RF Power MOSFET
Typical Output Characteristics
Top
Bottom
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
30
15
15
0
0
5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
0
25
50
75
100
125
Fig. 3
16
14
12
10
8
6
4
V_GS, Gate-to Source Voltage (V)
Gate Charge vs. Gate-to-Source Voltage
V_DS = 250V, I_D = 12.5A
Fig. 4
V_DS, Drain-to-Source Voltage
Extended Typical Output Characteristics
90
Top
75
60
Bottom
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
45
30
2
15
0
0
0 10 20 30 40 50 60 70 80 90 100 110
0
Gate Charge (nC)
25
50
75
100
125
V_DS, Drain-to-Source Voltage (V)
Fig. 5
VDS vs. Capacitance
10000
Ciss
1000
Coss
100
Crss
10
1
0
50 100 150 200 250 300 350 400
VDS Voltage