DE375-501N21A_09 Datasheet, PDF (1/5 Pages) IXYS Corporation – RF Power MOSFET

DE375-501N21A
RF Power MOSFET
♦ N-Channel Enhancement Mode
♦ Low Q_g and R_g
♦ High dv/dt
♦ Nanosecond Switching
♦ 50MHz Maximum Frequency
Symbol
V_DSS
Test Conditions
T_J = 25°C to 150°C
Maximum Ratings
500
V
V_DSS = 500 V
I_D25
= 25 A
R_DS(on) = _{0.35 Ω}
P_DC
= 940 W
V_DGR
T_J = 25°C to 150°C; R_GS = 1 MΩ
500
V
V_GS
Continuous
±20
V
V_GSM
Transient
±30
V
I_D25
T_c = 25°C
25
A
I_DM
T_c = 25°C, pulse width limited by T_JM
150
A
I_AR
T_c = 25°C
21
A
E_AR
T_c = 25°C
30 mJ
dv/dt
P_DC
P_DHS
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
T_c = 25°C
Derate 3.7W/°C above 25°C
5 V/ns
>200 V/ns
940 W
425
GATE
W
DRAIN
P_DAMB
T_c = 25°C
4.5 W
R_thJC
0.16 C/W
SG1 SG2
SD1 SD2
R_thJHS
0.36 C/W
Features
Symbol Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
V_DSS
V_GS(th)
I_GSS
I_DSS
V_GS = 0 V, I_D = 3 ma
V_DS = V_GS, I_D = 250 µa
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
min.
500
3.5
R_DS(on)
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
typ.
4.6
max.
V
5.5 V
±100 nA
50 µA
1 mA
0.35 Ω
g_fs
V_DS = 100 V, I_D = 0.5I_D25, pulse test
6.5
7.6
9.0 S
T_J
-55
+175 °C
T_JM
175
°C
T_stg
-55
+175 °C
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 50MHz
• Easy to mount—no insulators needed
• High power density
T_L
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
3
g