DE275-501N16A Datasheet, PDF (3/5 Pages) IXYS Corporation – RF Power MOSFET

Fig. 1
60
Top
50
40
Bottom
30
Typical Output Characteristics
8-10V
7.5V
7V
6.5V
6V
5.5V
5V
20
10
0
0
10
20
30
40
50
V_DS, Drain-to-Source Voltage (V)
Fig. 3
14
Gate-to-Source Voltage vs. Gate Charge
V_DS = 250V, I_D = 8A
12
10
8
6
4
2
0
0
20
40
60
Gate Charge (nC)
Fig. 2
60
50
40
30
20
10
0
60
5
Fig. 4
10000
1000
100
10
1
80
0
DE275-501N16A
RF Power MOSFET
Typical Transfer Characteristics
V_DS = 60V, PW = 4uS
6
7
8
9
10
V_GS, Gate-to Source Voltage (V)
VD S vs. Capacitance
Ciss
Coss
Crss
200
400
600
800
V_DS Voltage (V)