DE275-501N16A Datasheet, PDF (1/5 Pages) IXYS Corporation – RF Power MOSFET

DE275-501N16A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q_g and R_g
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_c = 25°C
T_c = 25°C, pulse width limited by T_JM
T_c = 25°C
T_c = 25°C
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
Maximum Ratings
500
V
500
V
±20
V
±30
V
16
A
96
A
16
A
20 mJ
5 V/ns
>200 V/ns
V_DSS
=
I_D25
=
R_DS(on) =
P_DC
=
GATE
500 V
16 A
0.4 Ω
590 W
DRAIN
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
T_c = 25°C
Derate 1.9W/°C above 25°C
T_c = 25°C
590 W
284 W
3.0 W
0.25 C/W
0.53 C/W
Symbol Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
min.
typ. max.
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
V_GS = 0 V, I_D = 3 ma
V_DS = V_GS, I_D = 4 ma
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
500
3.5
V
4.0
5.5
V
±100 nA
50 µA
1 mA
.38
Ω
g_fs
V_DS = 20V, ID = 0.5 ID25 pulse test
3
5
8
S
T_J
-55
+175 °C
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
T_JM
175
°C
T_stg
-55
+175 °C
T_L
1.6mm(0.063 in) from case for 10 s
300
°C
Weight
2
g