CPC3960 Datasheet, PDF (3/5 Pages) IXYS Corporation – Depletion-Mode FET

INTEGRATED CIRCUITS DIVISION
CPC3960
0.25
0.20
0.15
0.10
0.05
0.00
-5
PERFORMANCE DATA @ 25ºC (Unless Otherwise Noted)*
Input Admittance
(V_DS=3V)
T_A=-40ºC
T_A=25ºC
T_A=110ºC
-4
-3
-2
-1
V_GS (V)
Threshold Voltage
(I_DS=1PA)
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Transconductance vs. Drain Current
(V_DS=3V)
400
T_A=-40ºC
300
T_A=25ºC
200
T_A=110ºC
100
0
-3.5
-100
0
-50 -25 0 25 50 75 100 125
0.00
0.05
0.10
0.15
0.20
Temperature (ºC)
I_D (A)
Forward Safe Operating Bias
(V_GS=0V, DC Load)
1
0.1
0.01
0.001
1
10
100
Voltage (V)
1000
250
200
150
100
50
0
0
Output Characteristics
V_GS=0V
V_GS=-0.5V
V_GS=-1V
V_GS=-1.5V
V_GS=-2V
1
2
3
4
5
6
V_DS (V)
On-Resistance vs. Temperature
(V_GS=0V, I_DS=50mA)
50
40
30
20
10
0
-50 -25
0 25 50 75 100 125
Temperature (ºC)
On-Resistance vs. Drain Current
50
45
T_A=110ºC
40
35
30
T_A=25ºC
25
20
15
T_A=-40ºC
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
I_D (A)
Power Dissipation
vs. Ambient Temperature
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 140
Temperature (ºC)
Blocking Voltage vs. Temperature
800
780
760
740
720
700
680
-50 -25
0 25 50 75 100 125
Temperature (ºC)
Leakage Current
(V_GS=-5V, V_DS=600V)
120
100
80
60
40
20
0
-50 -25
0 25 50 75 100 125
Temperature (ºC)
Capacitance vs. Drain-Source Voltage
(V_DS=-5V)
200
150
100
CISS
CRSS
50
COSS
0
0 5 10 15 20 25 30 35 40
V_DS (V)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R02
www.ixysic.com
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