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| CPC3960 Datasheet, PDF (1/5 Pages) IXYS Corporation – Depletion-Mode FET | |||
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INTEGRATED CIRCUITS DIVISION
BVDSX/
BVDGX
600V
RDS(on)
(max)
44ï
IDSS (min)
100mA
Package
SOT-223
Features
⢠High Breakdown Voltage: 600V
⢠On-Resistance: 44ï max. at 25ºC
⢠Low VGS(off) Voltage: -1.4 to -3.1V
⢠High Input Impedance
⢠Small Package Size: SOT-223
Applications
⢠Current Regulator
⢠Normally-On Switches
⢠Solid State Relays
⢠Converters
⢠Telecommunications
⢠Power Supply
CPC3960
600V N-Channel
Depletion-Mode FET
Description
The CPC3960 is a 600V, N-channel, depletion-mode,
Field Effect Transistor (FET) created using IXYS
Integrated Circuits Divisionâs proprietary vertical DMOS
process. Yielding a robust device with high input
impedance, this process enables world class, high
voltage MOSFET performance with an economical
silicon gate architecture.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown, which makes the CPC3960 ideal for use
in high-power applications.
The CPC3960 is a highly reliable FET device that
has been used extensively in IXYS Integrated Circuits
Divisionâs Solid State Relays for industrial and
telecommunications applications.
The CPC3960 is available in the SOT-223 package.
Ordering Information
Part #
CPC3960ZTR
Description
SOT-223: Tape and Reel (1000/Reel)
Package Pinout
D
4
123
GDS
Circuit Symbol
D
G
S
DS-CPC3960-R02
www.ixysic.com
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