MKI75-06A7 Datasheet, PDF (2/4 Pages) IXYS Corporation – Short Circuit SOA Capability Square RBSOA

MKI 75-06 A7
Diodes
Symbol
I_F25
I_F80
Conditions
T_C = 25°C
T_C = 80°C
Maximum Ratings
140
A
85
A
Equivalent Circuits for Simulation
Conduction
Symbol
V_F
I_RM
t_rr
R
thJC
Conditions
I_F = 75 A; V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
I_F = 60 A; di_F/dt = -500 A/µs; T_VJ = 125°C
V_R = 300 V; V_GE = 0 V
(per diode)
Characteristic Values
min. typ. max.
1.8 2.1 V
1.3
V
28
A
100
ns
0.61 K/W
IGBT (typ. at V_GE = 15 V; T_J = 125°C)
V₀ = 0.95 V; R₀ = 20 mΩ
Free Wheeling Diode (typ. at T_J = 125°C)
V₀ = 1.014 V; R₀ = 4 mΩ
Thermal Response
B3
Module
Symbol
T_VJ
T_stg
V_ISOL
M_d
Symbol
Conditions
I_ISOL ≤ 1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
R_pin-chip
d_S
d
A
R
thCH
Weight
Creepage distance on surface
Strike distance in air
with heatsink compound
Maximum Ratings
-40...+150
°C
-40...+125
°C
2500
V~
2.7 - 3.3
Nm
Characteristic Values
min. typ. max.
5
mΩ
6
mm
6
mm
0.02
K/W
180
g
IGBT (typ.)
C_th1 = 0.248 J/K; R_th1 = 0.343 K/W
C_th2 = 1.849 J/K; R_th2 = 0.097 K/W
Free Wheeling Diode (typ.)
C_th1 = 0.23 J/K; R_th1 = 0.483 K/W
C_th2 = 1.3 J/K; R_th2 = 0.127 K/W
Dimensions in mm (1 mm = 0.0394")
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