MKI75-06A7 Datasheet, PDF (1/4 Pages) IXYS Corporation – Short Circuit SOA Capability Square RBSOA

IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
MKI 75-06 A7
I
= 90 A
C25
V_CES
= 600 V
V_{CE(sat) typ.} = 2.1 V
Preliminary Data
B3
IGBTs
Symbol
V_CES
V_GES
I_C25
I_C80
RBSOA
t_SC
(SCSOA)
P_tot
Symbol
V
CE(sat)
V_GE(th)
I_CES
I_GES
t_d(on)
t
r
t_d(off)
t
f
E_on
E_off
C
ies
Q_Gon
R_thJC
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
600
V
± 20
V
T_C = 25°C
T_C = 80°C
90
A
60
A
V_GE
=
±15
V;
R
G
=
18
Ω;
T_VJ
=
125°C
Clamped inductive load; L = 100 µH
I_CM = 120
A
V_CEK ≤ V_CES
V_CE = V_CES; V_GE = ±15 V; R_G = 18 Ω; T_VJ = 125°C
non-repetitive
10
µs
T_C = 25°C
280
W
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
75
A;
V
GE
=
15
V;
T_VJ
=
25°C
T_VJ = 125°C
I_C = 1.5 mA; V_GE = V_CE
V_CE = V_CES; V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V = 300 V; I = 75 A
CE
C
V_GE = ±15 V; R_G = 18 Ω
2.1 2.6 V
2.5
V
4.5
6.5 V
1.3 mA
0.9
mA
200 nA
50
ns
50
ns
270
ns
40
ns
3.5
mJ
2.5
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
V_CE = 300V; V_GE = 15 V; I_C = 75 A
(per IGBT)
3200
190
pF
nC
0.44 K/W
Features
● _{NPT IGBT technology}
● _{low saturation voltage}
● _{low switching losses}
● _{switching frequency up to 30 kHz}
● _{square RBSOA, no latch up}
● _{high short circuit capability}
● _{positive temperature coefficient for}
easy parallelling
● _{MOS input, voltage controlled}
● _{ultra fast free wheeling diodes}
● _{solderable pins for PCB mounting}
● _{package with copper base plate}
Advantages
● _{space savings}
● _{reduced protection circuits}
● _{package designed for wave soldering}
Typical Applications
● _{motor control}
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
● _{supply of transformer primary winding}
- power supplies
- welding
- X-ray
- UPS
- battery charger
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
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