MEA75-12 Datasheet, PDF (2/2 Pages) IXYS Corporation – Fast Recovery Epitaxial Diode (FRED) Module

MEA 75-12 DA MEE 75-12 DA
MEK 75-12 DA
200
A
175
I_F ¹⁵⁰
125
100
T_VJ=125°C
T_VJ= 25°C
75
50
25
0
0
1
2V3
V_F
Fig. 1 Forward current I_F versus
voltage drop V_F per leg
1.4
1.2
K_f
1.0
0.8
0.6
I_RM
Q_r
10
T_VJ= 100°C
µC V_R = 600V
8
Q_r
6
I_F= 150A
I_F= 100A
I_F= 70A
4
2
0
10
100
A/µs 1000
-di_F/dt
Fig. 2 Reverse recovery charge Q_r
versus -di_F/dt
350
ns
t_rr ³⁰⁰
T_VJ= 100°C
V_R = 600V
I_F= 150A
250
I_F= 100A
I_F= 70A
200
0.4
0
50
100 °C 150
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus junction temperature T_VJ
0.6
K/W
0.5
150
0 200 400 600 A8/0µ0s 1000
-di_F/dt
Fig. 5 Recovery time t_rr versus -di_F/dt
100
A
80
I_RM
60
T_VJ= 100°C
V_R = 600V
I_F= 150A
I_F= 100A
I_F= 70A
40
20
0
0 200 400 600 A8/0µ0s 1000
-di_F/dt
Fig. 3 Peak reverse current I_RM
versus -di_F/dt
100
A
V_FR⁸⁰
t_fr
60
2.0
µs
V_FR
1.6
t_fr
1.2
40
0.8
20
0.4
T_VJ= 100°C
0
I_F = 150A
0.0
0 200 400 600 800 1A0/0µ0s
di_F/dt
Fig. 6 Peak forward voltage V_FR and t_fr
versus di_F/dt
0.4
Z_thJH
0.3
0.2
0.1
0.0
0.001
0.01
0.1
1s
Fig. 7 Transient thermal impedance junction to heatsink
75-12 DA
10
t
Constants for Z_thJH calculation:
i
R_thi (K/W)
t_i (s)
1
0.037
2
0.138
3
0.093
4
0.282
0.002
0.134
0.25
0.274
D6 - 6
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