MEA250-12DA Datasheet, PDF (2/2 Pages) IXYS Corporation – Fast Recovery Epitaxial Diode (FRED) Module

MEA 250-12 DA MEE 250-12 DA
MEK 250-12 DA
500
A
450
400
I_{F 350}
300
250
T_VJ=125°C
T_VJ= 25°C
200
150
100
50
0
0.0 0.5 1.0 1.5 2.0 V 2.5
V_F
Fig. 1 Forward current I_F versus
voltage drop V_F per leg
80
µC ^TVJ^{= 100°C}
70 ^VR ^{= 600V}
Q_{r 60 IF= 300A; max.}
50
I_F= 300A; typ.
I_F= 250A; typ.
40 ^{IF= 125A; typ.}
30
20
10
0
100
A/ms 1000
-di_F/dt
Fig. 2 Reverse recovery charge Q_r
versus -di_F/dt
200
A ^T_VJ^{= 100°C}
180 V_R = 600V
I_RM¹⁶⁰
140
120
I_F= 300A; max.
I_F= 300A; typ.
I_F= 250A; typ.
I_F= 125A; typ.
100
80
60
40
20
0
0 200 400 600 A8/0m0s 1000
-di_F/dt
Fig. 3 Peak reverse current I_RM
versus -di_F/dt
1.4
1.2
K_f
1.0
0.8
I_RM
0.6
Q_r
0.4
1200
ns
1000
t_rr
800
600
400
200
T_VJ= 100°C
V_R = 600V
I_F= 300A; max.
I_F= 300A; typ.
I_F= 250A; typ.
I_F= 125A; typ.
0.2
0
40
80 120 °C 160
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus junction temperature T
VJ
0
0 200 400 600 A8/0m0s 1000
-di_F/dt
Fig. 5 Recovery time t_rr versus -di_F/dt
100
VA
90
V_FR⁸⁰
t_fr
70
T_VJ= 125°C
I_F = 260A
V_FR
2.5
µs
2.0
t_fr
60
1.5
50
40
1.0
30
20
0.5
10
0
0.0
0
400
800 1200 A/ms
di_F/dt
Fig. 6 Peak forward voltage V_FR and t_fr
versus di /dt
F
0.25
K/W
0.20
Z_tthhJJSH
0.15
Constants for Z calculation:
thJS
i
R (K/W) t (s)
thi
i
1
0.002
0.08
2
0.008
0.024
3
0.054
0.112
4
0.164
0.464
0.10
0.05
0.00
0.001
0.01
0.1
1s
10
Fig. 7 Transient thermal impedance junction to heatsink
t
© 2000 IXYS All rights reserved
2-2