MEA250-12DA Datasheet, PDF (1/2 Pages) IXYS Corporation – Fast Recovery Epitaxial Diode (FRED) Module

Fast Recovery
Epitaxial Diode
(FRED) Module
MEA 250-12 DA
MEK 250-12 DA
MEE 250-12 DA
V_RRM = 1200 V
I_FAVM = 260 A
t_rr = 450 ns
Preliminary data
V_RSM
V
1200
V_RRM
V
1200
Type
MEA 250-12DA
123
MEK 250-12DA
123
MEE 250-012DA
123
3
2
1
Symbol
I_FRMS
I_FAVM ÿÿx
I_FRM
I_FSM
I²t
T_VJ
T_stg
T_Smax
P_tot
V_ISOL
M
d
d_S
d_A
a
Weight
Test Conditions
T_C = 75°C
T_C = 75°C; rectangular, d = 0.5
t_P < 10 ms; rep. rating, pulse width limited by T_VJM
T_VJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_VJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_VJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_VJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_c = 25°C
50/60 Hz, RMS t = 1 min
I_ISOL £ 1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
Maximum Ratings
367 A
260 A
1480 A
2400 A
2640 A
2160 A
2380 A
28800 A²s
29300 A²s
23300 A²s
23800 A²s
-40...+150 °C
-40...+125 °C
110 °C
875 W
3000 V~
3600 V~
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
12.7 mm
9.6 mm
50 m/s²
150 g
Symbol
Test Conditions
I_R
V_F
V_T0
r_T
R_thJH
R_thJC
t_rr
I_RM
T_VJ = 25°C
T_VJ = 25°C
T_VJ = 125°C
V_R = V_RRM
V_R = 0.8 • V_RRM
V_R = 0.8 • V_RRM
I_F = 150 A;
I_F = 260 A;
T_VJ = 125°C
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
For power-loss calculations only
DC current
DC current
I_F = 300 A
V_R= 600 V
-di/dt = 400 A/ms
T_VJ = 100°C
T_VJ = 25°C
T_VJ = 100°C
Characteristic Values (per diode)
typ.
max.
12 mA
3 mA
60 mA
1.38 V
1.69 V
1.54 V
1.80 V
1.16 V
1.46 mW
0.228 K/W
0.143 K/W
450
500 ns
55 A
83 A
x I_FAVM rating includes reverse blocking losses at T_VJM, V_R = 0.6 V_RRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Features
q _{International standard package}
with DCB ceramic base plate
q _{Planar passivated chips}
q _{Short recovery time}
q _{Low switching losses}
q _{Soft recovery behaviour}
q _{Isolation voltage 3600 V~}
q _{UL registered E 72873}
Applications
q _{Antiparallel diode for high frequency}
switching devices
q _{Free wheeling diode in converters}
and motor control circuits
q _{Inductive heating and melting}
q _{Uninterruptible power supplies (UPS)}
q _{Ultrasonic cleaners and welders}
Advantages
q _{High reliability circuit operation}
q _{Low voltage peaks for reduced}
protection circuits
q _{Low noise switching}
q _{Low losses}
Dimensions in mm (1 mm = 0.0394")
1-2