IXTQ200N10T Datasheet, PDF (2/5 Pages) IXYS Corporation – TrenchMVTM Power MOSFET

Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
g_fs
V_DS = 10V, I_D = 60A, Note 1
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
t_d(on)
t_r
t_d(off)
t_f
Resistive Switching Times
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 50A
R_G = 3.3Ω (External)
Q_g(on)
Q_gs
Q_gd
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 50A
R_thJC
R_thCH
Source-Drain Diode
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
I_S
V_GS = 0V
I_SM
Repetitive, Pulse width limited by T_JM
V_SD
I_F = 50A, V_GS = 0V, Note 1
t_rr
Q_RM
I_RM
I_F = 100A, V_GS = 0V,-di/dt = 100A/μs
V_R = 50V
Characteristic Values
Min. Typ. Max.
60
96
S
9400
pF
1087
pF
140
pF
35
ns
31
ns
45
ns
34
ns
152
nC
47
nC
47
nC
0.27 °C/W
0.25
°C/W
Characteristic Values
Min. Typ. Max.
200 A
500 A
1.0 V
76
ns
205
nC
5.4
A
IXTH200N10T
IXTQ200N10T
TO-247 (IXTH) Outline
∅P
123
e
Terminals: 1 - Gate
2 - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A₁
2.2 2.54
A₂
2.2
2.6
b
1.0 1.4
b₁ 1.65 2.13
b₂ 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅ P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-3P (IXTQ) Outline
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R_DS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537