IXTQ200N10T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchMVTM Power MOSFET

TrenchMV^TM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH200N10T
IXTQ200N10T
V_DSS =
I_D25 =
R_DS(on) ≤
100V
200A
5.5mΩ
TO-247 (IXTH)
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Transient
T_C = 25°C
Lead Current Limit, RMS
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
TO-247
TO-3P
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
R_DS(on)
V_DS = V_DSS
V_GS = 0V
T_J = 150°C
V_GS = 10V, I_D = 50A, Notes 1, 2
Maximum Ratings
100
V
100
V
± 30
V
200
A
75
A
500
A
40
A
1.5
J
550
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
6.0
g
5.5
g
Characteristic Values
Min. Typ. Max.
100
V
2.5
4.5 V
±200 nA
5 μA
250 μA
4.5
5.5 mΩ
G
D
S
TO-3P (IXTQ)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard packages
175°C Operating Temperature
Avalanche Rated
Low R_DS(on)
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS99654A(10/08)