IXTK80N25 Datasheet, PDF (2/5 Pages) IXYS Corporation – High Current MegaMOSTM FET

IXTK 80N25
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
g_fs
V_DS = 10 V; I_D = 0.5 I_D25, pulse test
Characteristic values
Min. Typ. Max.
40
56
S
C_iss
6000
pF
C_oss
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
1125
pF
C_rss
420
pF
t_d(on)
28
ns
t_r
V_GS = 10 V, V_DS = 0.5 V_DSS, I_D = 0.5 I_D25
25
ns
t_d(off)
R_G = 1.0 Ω (External)
88
ns
t_f
24
ns
Q_g(on)
Q_gs
Q_gd
240
nC
V_GS = 10 V, V_DS = 0.5 V_DSS, I_D = 0.5 I_D25
40
nC
110
nC
R_thJC
R_thCK
0.15
0.23 K/W
K/W
Source-Drain Diode
Symbol Test Conditions
Ratings and Characteristics
(T_J = 25°C unless otherwise specified)
Min. Typ. Max.
I_S
V_GS = 0V
80
A
I_SM
Repetitive; pulse width limited by T_JM
320
A
V_SD
I_F = I_S, V_GS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5 V
t_rr
I_F = 25A, -di/dt = 100 A/µs, V_R = 100V
Q_rr
300
ns
3.0
µC
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
1.020
.033
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505