IXTK80N25 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Current MegaMOSTM FET

High Current
MegaMOS^TM FET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTK 80N25
V_DSS =
I_D25
=
= R_DS(on)
250 V
80 A
33 mΩ
Symbol Test conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1.0 MΩ
Continuous
Transient
T_C = 25°C MOSFET chip capability
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
250
V
250
V
±20
V
±30
V
80
A
75
A
320
A
80
A
60
mJ
2.5
J
5
V/ns
540
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
•
•
Low R_DS
Rugged
(on) ^{HDMOSTM process}
polysilicon gate cell structure
• International standard package
• Fast switching times
Applications
• Motor controls
• DC choppers
• Switched-mode power supplies
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 1 mA
V_GS(th)
V_DS = V_GS, I_D = 250 µA
I_GSS
V_GS = ±20 V DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
R_DS(on)
VPu_{GSlse=te1s0t,Vt,≤}I_{D3=000.m5 sID,2d5 uty cycle d ≤ 2%}
Characteristic Values
Min. Typ.
Max.
250
V
2.0
4.0 V
±100 nA
50 µA
2 mA
33 mΩ
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS98953A(11/03)