IXGH72N60C3 Datasheet, PDF (2/6 Pages) IXYS Corporation – GenX3 600V IGBT

Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
g_fs
I_C = 50A, V_CE = 10V, Note 1
C_ies
C_oes
C_res
V_CE = 25V, V_GE = 0V, f = 1MHz
Q_g
Q_ge
I_C = 50A, V_GE = 15V, V_CE = 0.5 • V_CES
Q_gc
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
Inductive Load, T_J = 25°C
I_C = 50A, V_GE = 15V
V_CE = 480V, R_G = 2Ω, Note 2
Inductive Load, T_J = 125°C
I_C = 50A, V_GE = 15V
V_CE = 480V, R_G = 2Ω, Note 2
R_thJC
R_thCK
Characteristic Values
Min. Typ. Max.
33
55
S
4780
pF
330
pF
117
pF
174
nC
33
nC
72
nC
27
ns
37
ns
1.03
mJ
77
130 ns
55
110 ns
0.48 0.95 mJ
26
ns
36
ns
1.48
mJ
120
ns
124
ns
0.93
mJ
0.23 °C/W
0.21
°C/W
IXGH72N60C3
TO-247 (IXGH) Outline
123
∅P
e
Terminals: 1 - Gate
3 - Emitter
Dim. Millimeter
Min. Max.
A
4.7 5.3
A₁
2.2 2.54
A₂
2.2 2.6
b
1.0 1.4
b₁ 1.65 2.13
b₂ 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Collector
Tab - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V_CE(Clamp), T_J or R_G.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537