IXGH72N60C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 600V IGBT

GenX3^TM 600V IGBT IXGH72N60C3
High-Speed PT IGBT for
40-100kHz Switching
V_CES =
I_C110 =
V ≤ _CE(sat)
t_{fi (typ)} =
600V
72A
2.5V
55ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Limited by Leads)
T_C = 110°C (Chip Capability)
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_VJ = 125°C, R_G = 2Ω
Clamped Inductive Load
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
72
A
360
A
50
500
I_CM = 150
≤ V_CE V_CES
540
-55 ... +150
150
-55 ... +150
300
260
1.13/10
6
A
mJ
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_CES
I_C = 250μA, V_CE = V_GE
V_CE = V_CES, V_GE = 0V
I_GES
V_CE(sat)
V_CE = 0V, V_GE = ±20V
I_C = 50A, V_GE = 15V
T_J = 125°C
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
50 μA
1 mA
±100 nA
2.10 2.50 V
1.65
V
TO-247 AD
G
CE
Tab
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{Avalanche Rated}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99961B(11/09)