IXGH30N60C3D1 Datasheet, PDF (2/7 Pages) IXYS Corporation – GenX3 600V IGBT with Diode

Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
g_fs
I_C = 20A, V_CE = 10V, Note 1
C_ies
C_oes
C_res
Q_g
Q_ge
Q_gc
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
R_thJC
R_thCS
V_CE = 25V, V_GE = 0V, f = 1MHz
I_C = 20A, V_GE = 15V, V_CE = 0.5 • V_CES
Inductive load, T_J = 25°C
I_C = 20A, V_GE = 15V
V_CE = 300V, R_G = 5Ω
Inductive load, T = 125°C
J
I_C = 20A, V_GE = 15V
V_CE = 300V, R_G = 5Ω
(TO-247)
Characteristic Values
Min. Typ. Max.
9
30
S
915
78
32
38
8
17
16
26
0.27
42
47
0.09
17
28
0.44
70
90
0.33
0.21
pF
pF
pF
nC
nC
nC
ns
ns
mJ
75 ns
ns
0.18 mJ
ns
ns
mJ
ns
ns
mJ
0.56 °C/W
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
V_F
I_RM
t_rr
R_thJC
I_F = 30A, V_GE = 0V, Note 1
T_J = 150°C
I_F = 30A, V_GE = 0V, -di_F/dt = 100A/μs, T_J = 100°C
V_R = 100V
T_J =100°C
I_F = 1A, -di/dt = 100A/μs, V_R = 30V
2.7
V
1.6
V
4A
100
ns
25
ns
0.9 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXGH30N60C3D1
IXGT30N60C3D1
TO-268 (IXGT) Outline
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A₁
2.2 2.54
A₂
2.2 2.6
b
1.0 1.4
b₁ 1.65 2.13
b₂ 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537