IXGH30N60C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 600V IGBT with Diode

GenX3^TM 600V IGBT
with Diode
High speed PT IGBTs for
40-100 kHz Switching
IXGH30N60C3D1
IXGT30N60C3D1
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 600V
= 30A
≤ 3.0V
= 47ns
Symbol
V_CES
V_CGR
V
GES
V_GEM
I_C25
I_C110
I_D110
I
CM
SSOA
(RBSOA)
P
C
T_J
T_JM
T_stg
T
L
T
SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 5Ω
Clamped inductive load @ V_CE ≤ 600V
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-268
TO-247
Maximum Ratings
600
V
600
V
±20
V
±30
V
60
A
30
A
30
A
150
A
I_CM = 60
A
220
-55 ... +150
150
-55 ... +150
300
260
1.13/10
4
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V
CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
I_C = 250μA, V_GE = 0V
I_C = 250μA, V_CE = V_GE
600
V
3.5
5.5 V
V_CE = V_CES
V_GE = 0V
T_J = 125°C
75 μA
1 mA
V_CE = 0V, V_GE = ±20V
±100 nA
I_C = 20A, V_GE = 15V, Note 1
T_J = 125°C
2.6 3.0 V
1.8
V
TO-268 (IXGT)
GE
TO-247(IXGH)
C (TAB)
GC
E
G = Gate
E = Emitter
( TAB )
C = Collector
TAB = Collector
Features
z _{Optimized for low switching losses}
z _{Square RBSOA}
z _{Anti-parallel ultra fast diode}
z _{International standard packages}
Advantages
z _{High power density}
z _{Low gate drive requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2008 IXYS CORPORATION, All rights reserved
DS100013A(11/08)