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IXGH30N120B3D1 Datasheet, PDF (2/7 Pages) IXYS Corporation – GenX3 1200V IGBT
◁
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V, Notes 2
VCE = 0.8 • VCES, RG = 5Ω
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Inductive load, TJ = 125°C
IC = 30A,VGE = 15V, Notes 2
VCE = 0.8 • VCES,RG = 5Ω
Characteristic Values
Min. Typ. Max.
11
19
S
1750
pF
120
pF
46
pF
87
nC
15
nC
39
nC
16
37
3.47
127
204
2.16
ns
ns
mJ
200 ns
380 ns
4.0 mJ
18
ns
38
ns
6.70
mJ
216
ns
255
ns
5.10
mJ
0.42 °C/W
0.21
°C/W
IXGH30N120B3D1
IXGT30N120B3D1
TO-247 AD Outline
∅P
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
TO-268 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VF
IF = 30A,VGE = 0V, Note 1
TJ = 150°C
2.8 V
1.6
V
IRM
trr
RthJC
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 300V
TJ = 100°C
4A
100
ns
0.9 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times may increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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