IXGH30N120B3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 1200V IGBT

GenX3^TM 1200V IGBT
High speed Low Vsat PT
IGBTs 3-20 kHz switching
IXGH30N120B3D1
IXGT30N120B3D1
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 1200V
= 30A
≤£ 3.5V
= 204ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C110
I_F110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 5Ω
Clamped inductive load
T_C = 25°C
Mounting torque (TO-247)
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
TO-247
TO-268
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
30
A
28
A
150
A
I_CM = 60
A
@ 0.8 • V_CE
300
W
-55 ... +150
150
-55 ... +150
1.13 / 10
300
260
6
4
°C
°C
°C
Nm/lb.in.
°C
°C
g
g
Symbol
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
I_C = 250μA, V_CE = V_GE
V_CE = V_CES
V_GE = 0V
T_J = 125°C
V_CE = 0V, V_GE = ±20V
I_C = 30A, V_GE = 15V, Note 1
T_J = 125°C
3.0
5.0 V
300 μA
1.5 mA
±100 nA
2.96
2.95
3.5 V
V
TO-247 AD (IXGH)
G
C
E
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Optimized for low conduction and}
switching losses
z _{Square RBSOA}
z _{Anti-parallel ultra fast diode}
z _{International standard packages}
Advantages
z _{High power density}
z _{Low gate drive requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Welding Machines}
© 2008 IXYS CORPORATION, All rights reserved
DS99566A(05/08)