IXGA42N30C3 Datasheet, PDF (2/6 Pages) IXYS Corporation – GenX3 300V IGBT

Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
g_fs
I_C = 0.5 • I_C110, V_CE = 10V, Note 1
C_ies
C_oes
C_res
V_CE = 25V, V_GE = 0V, f = 1MHz
Q_g
Q_ge
I_C = I_C110, V_GE = 15V, V_CE = 0.5 • V_CES
Q_gc
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
Inductive Load, T_J = 25°C
I_C = 0.5 • I_C110, V_GE = 15V
V_CE = 200V, R_G = 10Ω
t_d(on)
t_ri
E_on
t_d(off)
t_fi
E_off
Inductive Load, T_J = 125°C
I_C = 0.5 • I_C110, V_GE = 15V
V_CE = 200V, R_G = 10Ω
R_thJC
R_thCK
TO-220
TO-247
IXGA42N30C3 IXGH42N30C3
IXGP42N30C3
Characteristic Values
Min. Typ. Max.
20
33
S
TO-247 AD Outline
2140
pF
218
pF
∅P
60
pF
76
nC
15
nC
26
nC
21
23
0.12
113
65
0.15
21
22
0.21
127
102
0.20
ns
ns
mJ
170 ns
120 ns
0.28 mJ
ns
ns
mJ
ns
ns
mJ
e
Dim. Millimeter
Min. Max.
A
4.7 5.3
A₁
2.2 2.54
A₂
2.2 2.6
b
1.0 1.4
b₁ 1.65 2.13
b₂ 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
0.50
0.25
0.56 °C/W
°C/W
°C/W
TO-220 (IXGP) Outline
Note1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXGA) Outline
Pins: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537