IXGA42N30C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 300V IGBT

GenX3^TM 300V IGBT
High Speed PT IGBTs for
50-150kHz switching
IXGA42N30C3
IXGH42N30C3
IXGP42N30C3
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 110°C (chip capability)
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_VJ = 125°C, R_G = 10Ω
Clamped inductive load @ ≤ 300V
T_C = 25°C
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Mounting torque (TO-247)(TO-220)
TO-263
TO-247
TO-220
Maximum Ratings
300
V
300
V
±20
V
±30
V
42
A
250
A
42
A
250
mJ
I_CM = 84
A
223
-55 ... +150
150
-55 ... +150
300
260
1.13/10
2.5
6.0
3.0
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 42A, V_GE = 15V, Note1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
300
V
2.5
5.0 V
25 μA
500 μA
±100 nA
1.54
1.85 V
1.54
V
© 2008 IXYS CORPORATION, All rights reserved
V_CES =
I_C110 =
V ≤ _CE(sat)
t_{fi typ} =
300V
42A
1.85V
65ns
TO-263 (IXGA)
G
E
TO-247 (IXGH)
C (TAB)
G
C
E
TO-220 (IXGP)
C (TAB)
GCE
G = Gate
E = Emitter
C (TAB)
C = Collector
TAB = Collector
Features
z _{Optimized for low switching losses}
z _{Square RBSOA}
z _{High current handling capability}
z _{International standard packages}
Advantages
z _{High power density}
z _{Low gate drive requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
DS99885B(07/08)