IXFR70N15 Datasheet, PDF (2/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

IXFR 70N15
Symbol
g
fs
C_iss
C_oss
C
rss
t_d(on)
t
r
t_d(off)
t
f
Q
g(on)
Q_gs
Q_gd
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = I
DS
D
T
Notes 2, 3
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V = 10 V, V = 0.5 • V , I = I
GS
DS
DSS D
T
R_G = 1 W (External), Notes 2, 3
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = I_T
Notes 2, 3
30 45
S
3600
pF
1080
pF
360
pF
35
ns
52
ns
70
ns
23
ns
180
nC
28
nC
92
nC
0.5 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I
V =0V
S
GS
I_SM
Repetitive; Note 1
V_SD
I_F = I_T, V_GS = 0 V, Notes 2, 3
t_rr
Q_RM
I_F = 50A,-di/dt = 100 A/ms, V_R = 100 V
I_RM
70 A
280 A
1.5 V
250 ns
0.85
mC
8
A
Note: 1. Pulse width limited by T_JM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
3. I = 35A
T
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter
Min. Max.
A 4.83 5.21
A₁ 2.29 2.54
A₂ 1.91 2.16
b 1.14 1.40
b₁ 1.91 2.13
b₂ 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
S 13.21 13.72
T 15.75 16.26
U 1.65 3.03
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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