IXFR70N15 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

Advanced Technical Information
HiPerFET^TM Power MOSFETs IXFR 70N15
ISOPLUS247^TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
V_DSS = 150 V
I_D25 = 67 A
R_DS(on)= 28 mW
t_rr £ 250ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
D(RMS)
I_DM
I
AR
E_AR
E
AS
dv/dt
P
D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C (MOSFET chip capability)
External lead (current limit)
T_C = 25°C, Note 1
T
C
= 25°C
T_C = 25°C
T
C
= 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T_J £ 150°C, R_G = 2 W
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
150
V
150
V
±20
V
±30
V
67
A
280
A
70
A
70
A
30
mJ
1.0
J
5 V/ns
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
5
g
Test Conditions
V_GS = 0 V, I_D = 250mA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V = 10 V, I = I
GS
DT
Notes 2, 3
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
150
2.0
T_J = 25°C
T_J = 125°C
V
4.0 V
±100 nA
25 mA
750 mA
28 mW
ISOPLUS 247^TM
E153432
Isolated backside*
G = Gate D = Drain S = Source
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
Switching (UIS)
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98714 (03/27/00)
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