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| IXFR48N60P Datasheet, PDF (2/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS247 | |||
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IXFR48N60P
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(T
J
=
25°
C,
unless
otherwise
specified)
Min. Typ. Max.
VDS = 20 V; ID = IT, Notes 1, 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 0.5 VDSS, ID = IT, VGS = 10 V
RG = 2 ⦠(External)
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
35 53
S
8860
pF
850
pF
60
pF
30
ns
25
ns
85
ns
22
ns
150
nC
50
nC
50
nC
0.42 °C/W
0.15
° C/W
ISOPLUS247 Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0 V
32 A
ISM
Repetitive
VSD
IF = IS, VGS = 0 V, Note 1
trr
IF = 20A, -di/dt = 100 A/µs
QRM
VR = 480V
IRM
Notes:
1. Pulse test, t â¤300 µs, duty cycle d ⤠2 %;
2. Test current IT = 24 A.
110 A
1.5 V
200 ns
0.8
µC
6.0
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
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