IXFR48N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS247

PolarHV^TM HiPerFET ^{IXFR 48N60P}
Power MOSFET
ISOPLUS247^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS
I_D25
R_DS(on)
t_rr
= 600 V
= 32 A
≤ 150 mΩ
≤ 200 ns
Symbol
V_DSS
V_DGR
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Maximum Ratings
600
V
600
V
ISOPLUS247 (IXFR)
E153432
V_GSS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
Continuous
Transient
T
C
= 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
±30
V
±40
V
G
32
A
D
S
ISOLATED TAB
110
A
32
A
70
mJ
2.0
J
G = Gate
S = Source
D = Drain
dv/dt
P_D
T_J
T_JM
T_stg
T
L
V_ISOL
F_C
Weight
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting Force
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 8 mA
I_GSS
V_GS = ±30 V_DC, V_DS = 0
20
V/ns
300
W ^Features
-55 ... +150
150
-55 ... +150
300
2500
20..120 / 4.5..26
5
°C
°C
°C
°C
V~
N/lb.
g
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
±200 nA
l _{International standard isolated}
package
l _{UL recognized package}
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic diode}
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
25 µA
1000 µA
R_DS(on)
V_GS = 10 V, I_D = I_T
150 m Ω
© 2006 IXYS All rights reserved
DS99184E(12/05)