IXFN32N120P Datasheet, PDF (2/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
g_fs
V_DS = 20V, I_D = 0.5 • I_D25, Note 1
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
R_Gi
Gate input resistance
t_d(on)
t_r
t_d(off)
t_f
Resistive Switching Times
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
R_G = 1Ω (External)
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCS
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
Characteristic Values
Min. Typ. Max.
17
28
S
21
nF
1100
pF
77
pF
0.84
Ω
70
ns
62
ns
88
ns
58
ns
360
130
160
0.05
nC
nC
nC
0.125 °C/W
°C/W
IXFN32N120P
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Source-Drain Diode
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
I_S
V_GS = 0V
I_SM
Repetitive, Pulse Width Limited by T_JM
V_SD
I_F = I_S, V_GS = 0V, Note 1
t_rr
Q_RM
I_RM
I_F = 20A, -di/dt = 100A/μs
V_R= 100V, V_GS = 0V
Characteristic Values
Min. Typ. Max.
32
A
128
A
1.5
V
300 ns
1.9
μC
15
A
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537