IXFN32N120P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Polar^TM HiPerFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN32N120P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 minute
I_ISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
V
1200
V
±30
V
±40
V
32
A
100
A
16
A
2
J
20
V/ns
1000
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
260
2500
3000
1.5/13
1.3/11.5
30
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
Characteristic Values
Min. Typ. Max.
1200
V
V_GS(th)
V_DS = V_GS, I_D = 1mA
3.5
6.5 V
I_GSS
V_GS = ±30V, V_DS = 0V
±300 nA
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
50 μA
5 mA
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
310 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
1200V
32A
310mΩ
300ns
miniBLOC
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z _{International Standard Package}
z _{miniBLOC, with Aluminium Nitride}
Isolation
z _{Isolation Voltage 2500 V~}
z _{High Current Handling Capability}
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Low RDS(on) HDMOS}TM _Process
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High Voltage Switch-Mode and}
Resonant-ModePower Supplies
z _{High Voltage Pulse Power}
Applications
z _{High Voltage Discharge Circuits in}
Lasers Pulsers, Spark Igniters, RF
Generators
z _{High Voltage DC-DC Converters}
z _{High Voltage DC-AC Inverters}
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DS99718H(03/10)