IXFL34N100_09 Datasheet, PDF (2/2 Pages) IXYS Corporation – HiPerFET Power MOSFET ISOPLUS264

Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
g_fs
V_DS = 15V, I_D = 17A, Note 1
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
t_d(on)
t_r
t_d(off)
t_f
Resistive Switching Times
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 17A
R_G = 1Ω (External)
Q_g(on)
Q_gs
Q_gd
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 17A
R_thJC
R_thCS
Characteristic Values
Min. Typ.
Max.
18
40
S
9200
pF
1200
pF
300
pF
41
ns
65
ns
110
ns
30
ns
380
nC
65
nC
185
nC
0.225 °C/W
0.15
°C/W
IXFL34N100
ISOPLUS264^TM (IXFL) Outline
Note: Bottom heatsink meets
Source-Drain Diode
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
I_S
V_GS = 0V
34
A
I_SM
Repetitive, Pulse Width Limited by T_JM
136
A
V_SD
I_F = I_S, V_GS = 0V, Note 1
1.3
V
t_rr
I_F = I_S, V_GS = 0V
-di/dt = 100A/μs
Q_RM
I_RM
V_R = 100V
T_J = 125°C
180 300 ns
330
ns
2
μC
8
A
Ref: IXYS CO 0128
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
Please see IXFN36N100 data sheet for characteristic curves.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
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5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
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6,683,344 6,727,585 7,005,734 B2 7,157,338B2
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