IXFL34N100_09 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFET ISOPLUS264

HiPerFET^TM Power
MOSFET
ISOPLUS264^TM
IXFL34N100
(Electrically Isolated Tab)
Single-Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dV/dt, Low t_rr
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
V_ISOL
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from Case for 10s
Plastic body for 10s
Mounting Force
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Maximum Ratings
1000
V
1000
V
± 20
V
± 30
V
30
A
136
A
34
A
4
J
5
V/ns
550
-55 ... +150
150
-55 ... +150
300
260
40..120 / 9..27
2500
3000
8
W
°C
°C
°C
°C
°C
N/lb.
V~
V~
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0 V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20 V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
R_DS(on)
V_GS = 10V, I_D = 17A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1000
3.0
V
5.5 V
± 100 nA
100 μA
2 mA
280 mΩ
V_DSS =
I_D25 =
R_DS(on) ≤
1000V
30A
280mΩ
ISOPLUS264
G
D
S
ISOLATED TAB
G = Gate
S = Source
D = Drain
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation
z _{Low Drain to Tab Capacitance(<30pF)}
z _{Low RDS (on) HDMOS}TM _Process
z _{Rugged Polysilicon Gate Cell Structure}
z _{Avalanche Rated}
z _{Fast intrinsic Rectifier}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications:
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{DC Choppers}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS98932D(7/09)