IXFK20N120 Datasheet, PDF (2/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

IXFK 20N120
IXFX 20N120
Symbol
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_DS = 10 V; I_D = 0.5 • I_D25 Note 2
15 27
S
7400
pF
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
550
pF
100
pF
25
ns
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
45
ns
R_G = 1 Ω (External),
75
ns
20
ns
160
nC
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
35
nC
60
nC
0.16 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_S
V_GS = 0 V
I_SM
Repetitive;
pulse width limited by T_JM
V_SD
I_F = I_S, V_GS = 0 V, Note 1
t_rr
Q_RM
I_F = I_S, -di/dt = 100 A/µs, V_R = 100 V
I_RM
20 A
80 A
1.5 V
300 ns
1.4
µC
8
A
PLUS 247^TM Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
AA₁₂
2.29 2.54
1.91 2.16
b 1.14 1.40
bb₁₂
1.91 2.13
2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Note: 1. Pulse width limited by T_JM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32
2.29
3.17
20.83
2.59
3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020 1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505