IXFK20N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

Advanced Technical Information
HiPerFET^TM
Power MOSFETs
IXFK 20N120
IXFX 20N120
V_DSS =
I_D25 =
= R_DS(on)
1200 V
20 A
0.75 Ω
t_rr ≤ 300 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Test Conditions
TT_JJ
= 25°C to 150°C
= 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
TT_CC
= 25°C, Note 1
= 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
1200
V
1200
V
±30
V
±40
V
20
A
80
A
10
A
40
mJ
2
J
5 V/ns
780
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.9/6 Nm/lb.in.
6g
10 g
PLUS 247^TM
(IXFX)
G
DS
TO-264 AA (IXFK)
D (TAB)
G
DS
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International standard packages}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic rectifier}
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 8mA
V_GS = ±30 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
1200
V
2.5
4.5 V
±100 nA
T_J = 25°C
T_J = 125°C
100 µA
2 mA
0.75 Ω
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
z _{Temperature and lighting controls}
Advantages
z _{PLUS 247}TM _{package for clip or spring}
mounting
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS99112(11/03)