IXFH6N100Q Datasheet, PDF (2/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

Symbol
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_DS = 10 V; I_D = 0.5 • I_D25, pulse test
3
5
S
2200
pF
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
180
pF
30
pF
10
ns
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
15
ns
R_G = 4.7 Ω (External),
22
ns
12
ns
48
nC
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
17
nC
22
nC
(TO-247)
0.7 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_S
V_GS = 0 V
I_SM
Repetitive; pulse width limited by T_JM
V_SD
I_F = I_S, V_GS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
9A
24 A
1.5 V
t_rr
250 ns
Q_RM
I_F = I_S, -di/dt = 100 A/µs, V_R = 100 V
0.75
µC
I_RM
7.5
A
IXFH 6N100Q
IXFT 6N100Q
TO-247 AD (IXFH) Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A₁
A₂
b
b₁
b₂
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min. Max.
4.7
5.3
2.2 2.54
2.2
2.6
1.0
1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025